? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c16a i dm t c = 25 c, pulse width limited by t jm 35 a i ar t c = 25 c16a e ar t c = 25 c25mj e as t c = 25 c 750 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c to-263 package for 10s m d mounting torque (to-247 & to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-263 3 g to-247 5.5 g g = gate d = drain s = source tab = drain ds99357a(03/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 1 ma 3.0 5.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 0.5 i d25 400 m ? pulse test, t 300 s, duty cycle d 2 % polarhv tm hiperfet power mosfet advance technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-263 (ixta) to-220 (ixtp) d (tab) g s g s (tab) ixfa 16n50p ixfp 16n50p ixfh 16n50p v dss = 500 v i d25 = 16 a r ds(on) = 400 m ? ? ? ? ? t rr = 200 ns to-247 (ixfh) d (tab) g d s
ixfh 16n50p ixfa 16n50p ixfp 16n50p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 8 16 s c iss 2250 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 240 pf c rss 12 pf t d(on) 23 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 25 ns t d(off) r g = 18 ? (external) 70 ns t f 22 ns q g(on) 43 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 15 nc q gd 12 nc r thjc 0.42 k/w r thck (to-220) 0.25 k/w r thck (to-247) 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 16 a i sm repetitive 35 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 16 a, -di/dt = 100 a/ s 130 200 ns i rm v r = 100 v 6 a q rm 0.6 c pins: 1 - gate 2 - drain to-220 (ixtp) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 to-247 ad outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2005 ixys all rights reserved fig. 1. output characteristics @ 25 o c 0 4 8 12 16 20 24 0 2 4 6 8 10 12 14 16 18 v d s - volts i d - amperes v gs = 10v 8v 5v 7v 6v fig. 2. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 0 2 4 6 8 101214161820 v d s - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 3. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 16a i d = 8a v gs = 10v fig. 6. input adm ittance 0 2 4 6 8 10 12 14 16 18 44.5 55.5 66.5 7 v g s - volts i d - amperes t j = 125 c 25 c -40 c fig. 5. drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 4. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 4 8 1216 2024 i d - amperes r d s ( o n ) - normalized t j = 125 c t j = 25 c v gs = 10v ixfh 16n50p ixfa 16n50p ixfp 16n50p
ixfh 16n50p ixfa 16n50p ixfp 16n50p fig. 10. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 7. transconductance 0 4 8 12 16 20 24 024681012141618 i d - amperes g f s - siemens t j = -40 c 25 c 125 c fig. 8. source current vs. source-to-drain voltage 0 5 10 15 20 25 30 35 40 45 50 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 c t j = 25 c fig. 11. forw ard-bias safe operating area 1 10 100 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150 c t c = 25 c r ds( on) limit 10ms 25 s fig. 12. maximum transient thermal resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - c / w fig. 10. gate charge 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v g s - volts
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